Paper Title:
Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium
  Abstract

The deposition mechanism of metal-Ru films including incubation time was investigated for Ru films prepared by metal organic chemical vapor deposition from (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)Ruthenium (DER) - O2 system. Substrates with amorphous top-layer having various Hf/Si ratio, SiO2 (native oxide)/(001)Si (SiO2), HfSiON/SiON/(001)Si (HfSiON) and HfO2/SiON/(001)Si (HfO2), were used as substrates. The deposition temperature dependence of the deposition amount at the fixed deposition time ranging from 210 oC to 300 oC revealed that the deposition amount depended on the deposition temperature below 250 oC, while it was almost constant above this temperature. Incubation time depended on the kinds of substrate at 210 oC and the substrate surface was fully covered in a shorter time with smaller deposition amount for the substrates with shorter incubation time. In addition, the film with shorter incubation time had smaller surface roughness.

  Info
Periodical
Key Engineering Materials (Volumes 421-422)
Edited by
Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki
Pages
87-90
DOI
10.4028/www.scientific.net/KEM.421-422.87
Citation
M. Hirano, K. Kawano, H. Funakubo, "Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium", Key Engineering Materials, Vols. 421-422, pp. 87-90, 2010
Online since
December 2009
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Price
$32.00
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