Paper Title:
Half-Buried Structure Cu Bus Line in TFT LCD
  Abstract

As we know, we normally used stacked aluminum bus line as the Gate or Source/Drain layer in LCD now, but the next general LCD needs larger display area, higher resolution, and faster response time, so we need develop the new TFT bus line structure and select the appropriate metallization materials to decrease the resistance of bus line. There are many new kinds of structure and material were used, for example copper, silver and their alloys, pure copper have some advantages among them because of its low electric resistance and cost, but it is restricted by the problem of pure copper’s lifting and etching. In this paper, we not only use electroless copper plating to decrease the resistance and cost of bus line but also use the half-buried structure to increase the thickness of bus line, it can combine these two new technologies well in LCD. We use the half-buried structure copper bus line to make some panel samples, it can decrease the delay of RC greatly (it is lower than 1/4 of normal aluminum bus line panel in the same size).

  Info
Periodical
Key Engineering Materials (Volumes 428-429)
Edited by
Yuan Ming Huang
Pages
329-334
DOI
10.4028/www.scientific.net/KEM.428-429.329
Citation
H. L. Ning, C. O. Jeong, K. Y. Song, S. H. Cho, J. H. Kim, D. J. Yang, J. H. Song, S. Y. Kim, "Half-Buried Structure Cu Bus Line in TFT LCD", Key Engineering Materials, Vols. 428-429, pp. 329-334, 2010
Online since
January 2010
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Price
$32.00
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