Paper Title:
Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method
  Abstract

Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950°C for 5 min. The thin film made by RTA was smoothly and perfect structure.

  Info
Periodical
Key Engineering Materials (Volumes 428-429)
Edited by
Yuan Ming Huang
Pages
444-446
DOI
10.4028/www.scientific.net/KEM.428-429.444
Citation
R. M. Jin, D. Z. Li, L. L. Chen, X. F. Guo, J. X. Lu, "Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method", Key Engineering Materials, Vols. 428-429, pp. 444-446, 2010
Online since
January 2010
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