Paper Title:
Self-Similarity of Electrochemically-Deposited Copper Films on Porous Silicon
  Abstract

The microstructures of electrochemically-deposited copper control electrode on semiconducting porous silicon films were investigated with scanning electron microscopy. Our results showed that smooth control electrode could be grown in areas far from the edge of porous silicon film while irregular electrode was formed on the circular edge of porous silicon films. The self-similarity of the electrochemically-deposited copper control electrode was analyzed in details.

  Info
Periodical
Key Engineering Materials (Volumes 428-429)
Edited by
Yuan Ming Huang
Pages
515-518
DOI
10.4028/www.scientific.net/KEM.428-429.515
Citation
L. L. Chen, B. G. Zhai, Y. M. Huang, "Self-Similarity of Electrochemically-Deposited Copper Films on Porous Silicon", Key Engineering Materials, Vols. 428-429, pp. 515-518, 2010
Online since
January 2010
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