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Simulation of Gas Flow Field in HFCVD System for CVD Diamond Growth

Journal Key Engineering Materials (Volumes 431 - 432)
Volume Machining and Advanced Manufacturing Technology X
Edited by Yingxue Yao, Dunwen Zuo and Xipeng Xu
Pages 21-24
DOI 10.4028/www.scientific.net/KEM.431-432.21
Citation Huan Qing Lin et al., 2010, Key Engineering Materials, 431-432, 21
Online since March, 2010
Authors Huan Qing Lin, Wen Zhuang Lu, Dun Wen Zuo, Chun Yang, Feng Xu
Keywords CVD Diamond, Flow Field, HFCVD System, Simulation
Abstract

The thermal blockage and thermal round flow in HFCVD system for CVD diamond growth will lead to un-stability of product quality. Finite element method has been used to simulate the gas flow field around the cutting tool substrate within a HFCVD diamond reactor. Experiments have been done to prove the simulation results. Excellent agreement between simulation and experiment was obtained by depositing of CVD diamond coated cutting tool. The thermal blockage and thermal round flow in HFCVD system decrease by using a hollow substrate holder. High quality CVD diamond coating can be obtained using a hollow substrate holder.

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