Effect of Anisotropy on Chemical Mechanical Polishing of LBO Crystal |
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| Journal | Key Engineering Materials (Volumes 431 - 432) |
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| Volume | Machining and Advanced Manufacturing Technology X |
| Edited by | Yingxue Yao, Dunwen Zuo and Xipeng Xu |
| Pages | 33-36 |
| DOI | 10.4028/www.scientific.net/KEM.431-432.33 |
| Citation | Jun Li et al., 2010, Key Engineering Materials, 431-432, 33 |
| Online since | March, 2010 |
| Authors | Jun Li, Yong Wei Zhu, Dun Wen Zuo, Yong Zhu, Chuang Tian Chen |
| Keywords | Anisotropy, Chemical Mechanical Polishing (CMP), LBO Crystal, Material Removal Rate (MRR), Surface Roughness (SR) |
| Abstract | The anisotropy of LBO crystal leads to the different properties of different crystal faces, such as thermal expansion coefficient, which results in trouble of ultra-precision machining. Chemical mechanical polishing of a face (001), b face (010) and c face (001) of LBO crystal by adopting Logitech PM5 Precision Lapping & Polishing Machine in the same process conditions was investigated. The effect of anisotropy on MRR and surface roughness was studied. In the same CMP process conditions, c face of LBO crystal is the highest MRR, b face is inferior to and a face is the lowest. And surface roughness of c face is the best, b face is followed and a face is the worst. The results also show that the anisotropy leads to the different MRR and surface roughness on different crystal faces. In CMP of LBO crystal, the higher MRR is, and the better surface roughness is in the scope of experiment. |
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