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Research on High-Speed Preparation of Micro-Nanocrystalline Diamond Film

Journal Key Engineering Materials (Volumes 431 - 432)
Volume Machining and Advanced Manufacturing Technology X
Edited by Yingxue Yao, Dunwen Zuo and Xipeng Xu
Pages 37-40
DOI 10.4028/www.scientific.net/KEM.431-432.37
Citation Bing Kun Xiang et al., 2010, Key Engineering Materials, 431-432, 37
Online since March, 2010
Authors Bing Kun Xiang, Dun Wen Zuo, Duo Sheng Li, Rong Fa Chen, Ming Wang
Keywords Carbon Source Concentration, DC Arc Plasma Jet, High Speed Preparation, Micro-Nanocrystalline Diamond
Abstract

Micro-nanocrystalline diamond (M-NCD) Film may be successfully prepared on Mo substrate with DC arc plasmas jet deposition device. This paper studies the influences of carbon source concentration on the shape of M-NCD Film particles under circumstances of stable electric arc, and characterizes the grain size and quality of samples through SEM, AFM and Raman spectrum. The research result shows that, in the state of stable electric arc, relatively low carbon source concentration (1%) could deposit high-quality microcrystalline diamond film on the substrate, with a growth rate of up to 8.3μm/h and grain size of about 2~4μm; relatively high carbon source concentration (10% or 15%) could deposit high-quality nanocrystalline diamond(NCD) film on the microcrystalline diamond film at high speed, with a growth rate of up to above 12.6μm/h or 19.7μm/h, grain size of about 4~80nm and average grain size of 27.4nm.

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