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Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS

Journal Key Engineering Materials (Volumes 434 - 435)
Volume High-Performance Ceramics VI
Edited by Wei Pan and Jianghong Gong
Pages 169-172
DOI 10.4028/www.scientific.net/KEM.434-435.169
Citation Wei Kong Pang et al., 2010, Key Engineering Materials, 434-435, 169
Online since March, 2010
Authors Wei Kong Pang, I.M. Low, J.V. Hanna
Keywords Amorphous Phase, NMR, Oxidation, SIMS, Ti3SiC2
Abstract

The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at 1000°C.

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