Paper Title:
Microstructure and Leakage Current Characteristics of ZrTiO4 Thin Films by Sol-Gel Method
  Abstract

This paper describes microstructure and leakage current characteristics of ZrTiO4 thin films on ITO/Glass substrate were deposited by sol-gel method with a fix per-heating temperature of 250oC for 30min at various annealing temperatures from 600oC to 800oC for 1 hr. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by atomic force microscopy. The dependence of the microstructure and leakage current characteristics on annealing temperature was also investigated.

  Info
Periodical
Key Engineering Materials (Volumes 434-435)
Edited by
Wei Pan and Jianghong Gong
Pages
228-230
DOI
10.4028/www.scientific.net/KEM.434-435.228
Citation
C. H. Hsu, S. Y. Lin, H. H. Tung, "Microstructure and Leakage Current Characteristics of ZrTiO4 Thin Films by Sol-Gel Method", Key Engineering Materials, Vols. 434-435, pp. 228-230, 2010
Online since
March 2010
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Price
$32.00
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