In this study, 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 + 1 wt% Bi2O3 (NBT-BT3) composition sintered at 1200oC for 2h is used as target to deposit the NBT-BT3 thin films. The excess 1wt% Bi2O3 is used to compensate the vaporization of Bi2O3 during the deposition process. Ferroelectric NBT-BT3 thin films are deposited on SiO2/Si and Pt/Ti/SiO2/Si substrates using RF magnetron sputter method using the ceramic target fabricated by ourselves. After depositing under the optimal parameters, the thin films are then heated by a conventional thermal annealing (CFA) process conducted in air at temperatures ranging from 600- 800oC for 60min. The morphologies of NBT- BT3 thin films are observed using SEM the crystalline structures of NBT-BT3 thin films are investigated using XRD patterns. The large memory window and stable leakage current density examination reveals that NBT-BT3 thin films annealed on 600oC are better than other thin films under different CTA temperatures. Finally, the top view and cross-sectional images of SEM, memory windows, leakage currents and polarization characteristics of NBT-BT3 thin films are also well developed.