Paper Title:
Thermal Effects of Platinum Bottom Electrodes on PZT Sputtered Thin Films Used in MEMS Devices
  Abstract

For an optimum performance of MEMS devices such as microactuators and microsensors based on piezoelectric thin films a Si/Ti/Pt bottom electrode is widely used. This study shows temperature dependence of surface morphology of both platinum bottom electrode and piezoelectric lead titanate zirconate (PZT) thin films. Ti (10 nm) and Pt (100 nm) thin films were deposited on silicon substrate by thermal evaporation and electron beam, respectively, without vacuum breaking. After annealing treatment, the Pt film exhibited (111) preferred orientation. Finally a 0.8 micron thick PZT (54/46) films were deposited by r.f. magnetron sputtering at room temperature in pure Ar followed by a conventional post annealing treatment on silicon substrate. The XRD measurements have shown the perovskite structure of PZT films with (100) preferred orientation growth. The roughness of platinum film measured by AFM test showed the continuous smoothness of platinum surface for different annealing temperatures. The SEM test results demonstrated that irrespective of the annealing temperature increases, recrystallization of platinum and nano-size holes on Pt surface occurred. The latter caused the acceleration of out-diffusion titanium atoms through Pt layer and reach to the other side of surface. The surface state of Pt thin film is very important as it could strongly influence the PZT surface morphology so the existence of bubbles and depression on PZT surface are increased with both recrystallization of Pt grains and nano-size holes on Pt film surface when the annealing temperature increased.

  Info
Periodical
Edited by
Yuri Chugui, Yongsheng Gao, Kuang-Chao Fan, Roald Taymanov and Ksenia Sapozhnikova
Pages
598-602
DOI
10.4028/www.scientific.net/KEM.437.598
Citation
A. Koochekzadeh, E. K. Alamdari, A. A. G. Barzegar, A. A. Salardini, "Thermal Effects of Platinum Bottom Electrodes on PZT Sputtered Thin Films Used in MEMS Devices", Key Engineering Materials, Vol. 437, pp. 598-602, 2010
Online since
May 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jian Sheng Xie, Ping Luan, Jin Hua Li
Chapter 9: Composite Materials II
Abstract:Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of...
2770
Authors: Ching Fang Tseng, Yun Pin Lu, Hsin Han Tung, Pai Chuan Yang
Chapter 3: Electrical, Magnetic and Optical Ceramics
Abstract:This paper describes physical properties of (Ca0.8Sr0.2)TiO3 were deposited by sol-gel method with a fix per-heating temperature of 400oC for...
1171
Authors: Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, Vinh Le Thanh
Chapter 8: Diffusion in Electronic Materials
Abstract:An alternative solution for producing logic devices in microelectronics is spintronics (SPIN TRansport electrONICS). It relies on the fact...
439
Authors: Tai Long Gui, Si Da Jiang, Chun Cheng Ban, Jia Qing Liu
Chapter 2:Advanced Material Science and Technology
Abstract:AlN dielectric thin films were deposited on N type Si(100) substrate by reactive radio frequency magnetron sputtering that directly...
409