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Electrochemical Nanostructuring of Semiconductors by Capillary-Cell Method

Journal Key Engineering Materials (Volume 442)
Volume Advanced Materials XI
Edited by Shaheed Khan, Iftikhar us Salam and Karim Ahmed
Pages 1-6
DOI 10.4028/www.scientific.net/KEM.442.1
Citation Y.T. Taurbayev et al., 2010, Key Engineering Materials, 442, 1
Online since June, 2010
Authors Y.T. Taurbayev, K.A. Gonchar, A.V. Zoteev, Victor Timoshenko, Z.Zh. Zhanabayev, V.E. Nikulin, T.I. Taurbayev
Keywords Capillary-Cell Method, Chemical Etching, Electrochemical Etching, Nanocrystalline Structure, Photoluminescence (PL), Porous Semiconductor
Abstract

Wafers of silicon and compound semiconductors are nanostructured by using electrochemical or chemical etching (stain etching) in etching cell with electrolyte kept by capillary forces. Atomic force microscopy, infrared spectroscopy and Raman scattering methods reveale nanoporous and nanocrystalline structure of the treated surfaces. The formed porous semiconductors demonstrate efficient photoluminescence, which is controlled by etching parameters, i.e. current density, electrolyte content, etc. These results indicate good prospects of the employed capillary-cell method for preparing nanostructured porous materials with desired structure and optical properties.

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