Paper Title:
DLTS Studies of Al Diffused n-Si
  Abstract

We have studied the electrical properties of Si p-n junction diodes by deep level transient spectroscopy (DLTS) measurements. The p-n junctions were developed on a Phosphorus doped Si by depositing Al and annealing at various temperatures. In order to confirm junction formation, current-voltage and capacitance-voltage measurements were made. Two deep levels at Ec-0.17 eV (E1) and Ec-0.44 eV (E2) were observed in the DLTS spectrum. These traps have been characterized by their capture cross-section, activation energy level and trap density. On the basis of these parameters, level E1 can be assigned as V-O complex and E2 as P-V complex. These traps are related to the growth of n-Si wafer and not due to Al diffusion.

  Info
Periodical
Edited by
Shaheed Khan, Iftikhar us Salam and Karim Ahmed
Pages
393-397
DOI
10.4028/www.scientific.net/KEM.442.393
Citation
S. Siddique, M.M. Asim, F. Saleemi, S. Naseem, "DLTS Studies of Al Diffused n-Si", Key Engineering Materials, Vol. 442, pp. 393-397, 2010
Online since
June 2010
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