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MOCVD Grown Quantum Dot-in-a-Well Solar Cells

Journal Key Engineering Materials (Volume 442)
Volume Advanced Materials XI
Edited by Shaheed Khan, Iftikhar us Salam and Karim Ahmed
Pages 398-403
DOI 10.4028/www.scientific.net/KEM.442.398
Citation A. Majid et al., 2010, Key Engineering Materials, 442, 398
Online since June, 2010
Authors A. Majid, L. Fu, C. Jagadish, H. Tan
Keywords Dot-in-Well, GaAs, IBSC, InGaAs, MOCVD, Nanotechnology, Quantum Dot, Quantum Structured, Solar Cell
Abstract

This paper reports the experimental work on the characterization of quantum dot-in-well (DWELL) solar cell grown by metal-organic chemical vapor deposition (MOCVD) without employing any post-growing optimization like antireflection coating and metal grid. The structure of the 10-layer DWELL solar cells is studied by cross-sectional transmission electron microscopy (TEM). Room temperature photoluminescence (PL) spectra show strong quantization at 1178.5 nm with a linewidth of 79.9 nm. External quantum efficiency spectra show enhancement in the spectral response of the photocurrent with respect to the reference quantum dot cell (without DWELL structure). In spite of the reduction in conversion efficiency due to poor collection of current in external circuit compared to reference quantum dot cell it show the improvement in open circuit voltage.

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