Paper Title:
Determining the Complete Residual Stress Tensors in SOS Hetero-Epitaxial Thin Film Systems by the Technique of X-Ray Diffraction
  Abstract

This paper investigates residual stress of epitaxial silicon film on SOS thin film systems. The emphasis was to develop a method to obtain accurately the complete residual stress tensors. It was found that using the multiple asymmetric X-ray diffraction method to measure strains in 13 [hkl] directions, the complete residual stress tensors can be determined reliably. The results were verified by both the Raman Backscattering and the substrate curvature methods.

  Info
Periodical
Edited by
Jun Wang,Philip Mathew, Xiaoping Li, Chuanzhen Huang and Hongtao Zhu
Pages
742-747
DOI
10.4028/www.scientific.net/KEM.443.742
Citation
M. Liu, L. C. Zhang, A. Brawley, P. Atanackovic, S. Duvall, "Determining the Complete Residual Stress Tensors in SOS Hetero-Epitaxial Thin Film Systems by the Technique of X-Ray Diffraction ", Key Engineering Materials, Vol. 443, pp. 742-747, 2010
Online since
June 2010
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