Paper Title:
Tunable Barium Strontium Titanate Thin Films by CSD
  Abstract

BaxSr1-xTiO3 (BST) thin films were deposited by modified CSD, in which partially hydrolyzed Ti-alkoxide was reacted with Ba-Sr precursor solution to form highly polymerized BST precursor solutions, leading to the better electrical properties of the resultant thin films. BST precursor solutions of 0.1 M were prepared to deposit BST thin layers of 17nm ~ 20nm for one dip-coating operation with different barium to strontium ratio of Ba/Sr = 90/10, 70/30 and 50/50. Modified CSD-derived BST thin films were deposited on a Si wafer with Pt electrode or CSD-derived LaNiO3 (LNO) seeding layer with preferred orientation. BST thin films exhibited ferroelectric or paraelectric properties, depending upon the Ba/Sr ratio. Better electrical properties for the BST thin films were observed on a LNO seeding layer. Maximum tunability of our BST film was 41 % at 1MHz.

  Info
Periodical
Edited by
Shinobu Fujihara and Tadashi Takenaka
Pages
156-159
DOI
10.4028/www.scientific.net/KEM.445.156
Citation
D. Iwasaki, M. Maruyama, N. Sakamoto, D. S. Fu, N. Wakiya, H. Suzuki, "Tunable Barium Strontium Titanate Thin Films by CSD", Key Engineering Materials, Vol. 445, pp. 156-159, 2010
Online since
July 2010
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