Paper Title:
Dielectric Properties of HfO2 Films Prepared on Flexible Polymer Substrates Using UV Irradiation
  Abstract

The HfO2 films were prepared on the ITO/polyimide substrate using alkoxy-derived precursor solutions at low temperature. The HfO2 films prepared by UV-assisted process using the precursor solution modified with diethanolamine had smooth surface and RMS roughness values of HfO2 film were 1.2nm. The electrical properties of HfO2 films were improved by optimization of preparation condition. The leakage current density at 1V was below 10-5A/cm2. The dielectric constant was about 20. The loss tangent was below 0.1.

  Info
Periodical
Edited by
Shinobu Fujihara and Tadashi Takenaka
Pages
164-167
DOI
10.4028/www.scientific.net/KEM.445.164
Citation
K. Suzuki, K. Kato, "Dielectric Properties of HfO2 Films Prepared on Flexible Polymer Substrates Using UV Irradiation", Key Engineering Materials, Vol. 445, pp. 164-167, 2010
Online since
July 2010
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