Paper Title:
Effect of Substrate on Growth Mechanism of Flower Structured InN Fabricated by APHCVD
  Abstract

InN belongs to the III-group nitride materials and is known to have a low decomposition temperature which causes intractable grain growth compared to the other nitrides, GaN, AlN, etc. We prepared InNs with a flower-like shape as well as film structure by Atmospheric Pressure Halide CVD process, in which InN is synthesized by CVD under atmospheric pressure. In the present study, growth mechanisms of the flower structured InN prepared on Si(100) and a-plane sapphire substrates is reported.

  Info
Periodical
Edited by
Shinobu Fujihara and Tadashi Takenaka
Pages
209-212
DOI
10.4028/www.scientific.net/KEM.445.209
Citation
N. Sakamoto, H. Sugiura, D. S. Fu, N. Wakiya, H. Suzuki, "Effect of Substrate on Growth Mechanism of Flower Structured InN Fabricated by APHCVD", Key Engineering Materials, Vol. 445, pp. 209-212, 2010
Online since
July 2010
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