Paper Title:
Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-Sic Utilizing Fe Abrasive Particles
  Abstract

We have developed advanced lapping and polishing methods for silicon carbide (SiC) substrates using an Fe abrasive particles and hydrogen peroxide (H2O2) solution. In this method, a SiC surface is oxidized by hydroxyl radicals (OH*), which was generated by Fe catalyst reactions, and the oxide layer on the SiC is mechanically and/or chemically removed by Fe abrasive particles and solution [1-4]. In this study, we applied this planarization method for lapping and polishing SiC surface, in which catalytically generated hydroxyl radicals were utilized to oxidize the surface of a SiC wafer. The processed surfaces were observed by optical interferometric microscope, Nomarski differential interference contrast. These observations showed that surface roughness and flatness of a SiC substrate were markedly improved and scratch-free SiC surface was obtained. These results provide useful information for preparing a high-efficiency and high-accuracy SiC substrate.

  Info
Periodical
Key Engineering Materials (Volumes 447-448)
Edited by
Jianhong Zhao, Masanori Kunieda, Guilin Yang and Xue-Ming Yuan
Pages
146-149
DOI
10.4028/www.scientific.net/KEM.447-448.146
Citation
A. Kubota, M. Yoshimura, T. Watayo, Y. Nakanishi, M. Touge, "Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-Sic Utilizing Fe Abrasive Particles", Key Engineering Materials, Vols. 447-448, pp. 146-149, 2010
Online since
September 2010
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