Paper Title:
Fabrication of Damage-Free Curved Silicon Crystal Substrate for a Focusing X-Ray Spectrometer by Plasma Chemical Vaporization Machining
  Abstract

In the X-ray fluorescence analysis on sub-micron particle, application of the doubly curved crystal (DCC) spectrometer with Johansson-type geometry is effective to improve the lowest limit of detection because DCC makes it possible to focus and monochromatize an X-ray beam simultaneously. A strain-free crystal is essential for the high-performance focusing crystal spectrometer. We propose the application of the open-air type numerically controlled plasma chemical vaporization machining (NC-PCVM), which utilizes neutral reactive species generated by atmospheric pressure plasma, to fabricate the DCC substrate. By applying NC-PCVM technique, a curvature radius error of 0.08% was obtained, and there was no degradation of the crystallinity of the Si (111) substrate.

  Info
Periodical
Key Engineering Materials (Volumes 447-448)
Edited by
Jianhong Zhao, Masanori Kunieda, Guilin Yang and Xue-Ming Yuan
Pages
213-217
DOI
10.4028/www.scientific.net/KEM.447-448.213
Citation
M. Hosoda, K. Ueda, M. Nagano, N. Zettsu, S. Shimada, K. Taniguchi, K. Yamamura, "Fabrication of Damage-Free Curved Silicon Crystal Substrate for a Focusing X-Ray Spectrometer by Plasma Chemical Vaporization Machining", Key Engineering Materials, Vols. 447-448, pp. 213-217, 2010
Online since
September 2010
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Price
$32.00
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