Paper Title:
Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory
  Abstract

Reliability (or stability) of multi-level storage (MLS) is the critical characteristics for multi-level cells. In order to improve reliability of MLS of phase-change memory, there are two effective approaches, (i) enlargement of the ratio between resistance levels and (ii) reduction of scattering of resistance level. On the basis of our experimental results, it is demonstrated that the Ge2Sb2Te5-based double-layered cell has a high ratio of highest to lowest levels up to two-to-three orders of magnitude, implying high reliability. The cells exhibit the possibility of stable switching for four-level storage.

  Info
Periodical
Edited by
Osamu Hanaizumi and Masafumi Unno
Pages
140-144
DOI
10.4028/www.scientific.net/KEM.459.140
Citation
Y. Yin, T. Noguchi, H. Ohno, S. Hosaka, "Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory", Key Engineering Materials, Vol. 459, pp. 140-144, 2011
Online since
December 2010
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