Paper Title:
Proposed Phase-Change Memory with a Step-Like Channel for High-Performance Multi-State Storage
  Abstract

Lateral rectangular (R-) and step-like (S-) channel phase-change memory (PCM) cell structures are numerically analyzed for multi-state storage based on their temperature distributions and their programming characteristics. The S-PCM cell is characterized by the sequentially melted sub-channel and step-like programming characteristics. From the viewpoint of the performance for multi-state storage, the step-like characteristics indicate high controllability for its application of multi-state storage.

  Info
Periodical
Edited by
Osamu Hanaizumi and Masafumi Unno
Pages
145-150
DOI
10.4028/www.scientific.net/KEM.459.145
Citation
Y. Yin, S. Hosaka, "Proposed Phase-Change Memory with a Step-Like Channel for High-Performance Multi-State Storage", Key Engineering Materials, Vol. 459, pp. 145-150, 2011
Online since
December 2010
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