Paper Title:
Effect of Annealing on Sub-Gap Absorption in Amorphous InGaZnO4 Films
  Abstract

Optical absorption in amorphous InGaZnO4 films was examined by optical transmittance and photothermal spectroscopy using individual cantilever. The amorphous InGaZnO4 films have optical bandgap of ~3.5 eV, and Urbach tail absorption and mid-gap absorption at 2.0-3.0 eV. Mid-gap absorption was reduced by thermal annealing at 300 °C in an atmosphere. This observation indicates that heat-induced structural change causes reduction of gap states in amorphous InGaZnO4 films.

  Info
Periodical
Edited by
Osamu Hanaizumi and Masafumi Unno
Pages
19-22
DOI
10.4028/www.scientific.net/KEM.459.19
Citation
T. Gotoh, K. Kawarai, H. Wakabayashi, K. Kaneda, "Effect of Annealing on Sub-Gap Absorption in Amorphous InGaZnO4 Films", Key Engineering Materials, Vol. 459, pp. 19-22, 2011
Online since
December 2010
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