Paper Title:
Improvement of Crystallization Rate in Post-Annealed Ge2Sb2Te5 Films
  Abstract

Crystallization behaviors of dc sputtered Ge2Sb2Te5 films were studied by X-ray diffraction and transient optical transmittance. Crystalline peak at 29.0° in diffraction patterns appeared after thermal annealing at 180 and 210 °C. Crystallization rate increased after thermal annealing below crystallization temperature. These observations indicate that heat-induced structural change enhances crystallization rate of Ge2Sb2Te5 films.

  Info
Periodical
Edited by
Osamu Hanaizumi and Masafumi Unno
Pages
23-26
DOI
10.4028/www.scientific.net/KEM.459.23
Citation
K. Kawarai, T. Gotoh, "Improvement of Crystallization Rate in Post-Annealed Ge2Sb2Te5 Films", Key Engineering Materials, Vol. 459, pp. 23-26, 2011
Online since
December 2010
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