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Authors: Shinichi Takagi, Sanjeewa Dissanayake, Mitsuru Takenaka
Abstract:In this paper, we report on critical issues and possible solutions for realizing Ge MOSFETs on the Si platform. The main critical objectives...
1
Authors: Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Masanobu Miyao
Abstract:We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111)...
8
Authors: Yoshinari Kamakura, Tomofumi Zushi, Takanobu Watanabe, Nobuya Mori, Kenji Taniguchi
Abstract:Hot phonon generation and its impact on the current conduction in a nanoscale Si-device are investigated using a Monte Carlo simulation...
14
Authors: Nobuyoshi Koshida, Toshiyuki Ohta, Yoshiyuki Hirano, Romain Mentek, Bernard Gelloz
Abstract:The particular physical functions of quantum-sized silicon have been investigated, along with exploration of their potential device...
20
Authors: Daniel Moraru, Kiyohito Yokoi, Ryusuke Nakamura, Sakito Miki, Takeshi Mizuno, Michiharu Tabe
Abstract:An individual dopant atom may become the active unit of future electronic devices by mediating single-electron transport in nanoscale...
27
Authors: Miftahul Anwar, Daniel Moraru, Yuya Kawai, Maciej Ligowski, Takeshi Mizuno, Ryszard Jabłoński, Michiharu Tabe
Abstract:Low temperature Kelvin Probe Force Microscopy (LT-KFM) can be used to monitor the electronic potential of individual dopants under an...
33
Authors: Yoko Sakurai, Shintaro Nomura, Kenji Shiraishi, Kenji Ohmori, Keisaku Yamada
Abstract:We have investigated C-V and photoluminescence (PL) characteristics of ultra-thin silicon-on-insulator (SOI) samples. Thickness dependence of...
39
Authors: Yukihiro Takada, Masakazu Muraguchi, Tetsuo Endoh, Shintaro Nomura, Kenji Shiraishi
Abstract:Ohmic contacts are crucial for both device applications and the study of fundamental physics. From the perspective of device scaling trends,...
43
Authors: Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Yasuteru Shigeta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Shintaro Nomura, Kenji Shiraishi, Tetsuo Endoh
Abstract:We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our...
48
Showing 1 to 10 of 39 Paper Titles