Microscopic Structure of Directly Bonded Silicon Substrates |
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| Journal | Key Engineering Materials (Volume 470) |
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| Volume | Technology Evolution for Silicon Nano-Electronics |
| Edited by | Seiichi Miyazaki and Hitoshi Tabata |
| Pages | 164-170 |
| DOI | 10.4028/www.scientific.net/KEM.470.164 |
| Citation | Tetsuji Kato et al., 2011, Key Engineering Materials, 470, 164 |
| Online since | February, 2011 |
| Authors | Tetsuji Kato, Yuji Ohara, Takaya Ueda, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima, Eiji Toyoda, Hiromichi Isogai, Takeshi Senda, Kouji Izunome, Hiroo Tajiri, Osamu Sakata, Shigeru Kimura |
| Keywords | Direct Silicon Bonding, Dislocation, TEM, X-Ray Microdiffraction |
| Abstract | Using X-ray microdiffraction (XRMD) and transmission electron microscopy (TEM) techniques, we have investigated the microscopic structure of Si(011)/Si(001) direct silicon bonding (DSB) substrates. XRMD was performed to measure the local lattice spacing and tilting in the samples before and after oxide out-diffusion annealing. Diffraction analyses for (022) lattice planes with two orthogonal in-plane directions of X-ray incidence revealed anisotropic domain textures in the Si(011) layer. Such anisotropy was also confirmed by TEM in the morphology at the Si(011)/Si(001) bonded interface. The anisotropic crystallinity is discussed on the basis of interfacial defect structures which are proper to the DSB substrate. |
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