Paper Title:
Microscopic Structure of Directly Bonded Silicon Substrates
  Abstract

Using X-ray microdiffraction (XRMD) and transmission electron microscopy (TEM) techniques, we have investigated the microscopic structure of Si(011)/Si(001) direct silicon bonding (DSB) substrates. XRMD was performed to measure the local lattice spacing and tilting in the samples before and after oxide out-diffusion annealing. Diffraction analyses for (022) lattice planes with two orthogonal in-plane directions of X-ray incidence revealed anisotropic domain textures in the Si(011) layer. Such anisotropy was also confirmed by TEM in the morphology at the Si(011)/Si(001) bonded interface. The anisotropic crystallinity is discussed on the basis of interfacial defect structures which are proper to the DSB substrate.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
164-170
DOI
10.4028/www.scientific.net/KEM.470.164
Citation
T. Kato, Y. Ohara, T. Ueda, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, "Microscopic Structure of Directly Bonded Silicon Substrates", Key Engineering Materials, Vol. 470, pp. 164-170, 2011
Online since
February 2011
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$32.00
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