Paper Title:
Si Nanodot Device Fabricated by Thermal Oxidation and their Applications
  Abstract

Small single-electron devices (SEDs) consisting of many Si nanodots are fabricated on a silicon-on-insulator (SOI) wafer by means of pattern-dependent oxidation (PADOX) method. We investigated SEDs from two kinds of viewpoint. One is how to fabricate the nanodots, especially coupled nanodots, which are important to achieve quantum computers and single-electron transfer devices. The other is demonstration of new applications that tolerate the size fluctuation. In order to achieve multi-coupled nanodots, we developed an easy method by applying PADOX to a specially designed Si nanowire which has small constrictions at the ends of the wire. We confirmed the double-dot formation and position of the Si nanodots in the wire by analyzing the measured electrical characteristics. To achieve high functionality together with low-power consumption and tolerance to size fluctuation, we developed nanodot array device which has many input gates and outputs terminals. The fabricated three-input and two-output nanodot device actually provide high functionality such as a half adder and a full adder.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
175-183
DOI
10.4028/www.scientific.net/KEM.470.175
Citation
Y. Takahashi, M. Y. Jo, T. Kaizawa, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, H. Inokawa, J. B. Choi, "Si Nanodot Device Fabricated by Thermal Oxidation and their Applications", Key Engineering Materials, Vol. 470, pp. 175-183, 2011
Online since
February 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Mitsuo Okamoto, Seiji Suzuki, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda
Abstract:We have fabricated lateral RESURF MOSFETs on 4H-SiC(0001) Si-face and (000-1) C-face substrates, and compared those properties. The channel...
805
Authors: Jae Bon Koo, Jung Wook Lim, Chan Hoe Ku, Sang Chul Lim, Jung Hun Lee, Seong Hyun Kim, Sun Jin Yun, Yong Suk Yang, Kyung Soo Suh
Abstract:We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited...
383
Authors: Young Hwan Choi, Ji Yong Lim, Kyu Heon Cho, Young Shil Kim, Min Koo Han
Abstract:AlGaN/GaN HEMTs employing a tapered field plate, which decreases the gate leakage current and improves the breakdown voltage without any...
971
Authors: Bernd Hähnlein, Benjamin Händel, Frank Schwierz, Jörg Pezoldt
Chapter 10: Device and Application
Abstract:Epitaxial graphene grown on semiinsulating silicon carbide was used to fabricate side gate graphene transistors. The transconductance of the...
1028
Authors: Seung Min Lee, Hyun Jun Jang, Jong Tae Park
Chapter 5: Electronics and Materials for Electronics
Abstract:A comparative study on off-state breakdown characteristics in nanowire JL and IM multiple gate MOSFETs has been performed for different gate...
295