Paper Title:
Influences of Carrier Transport on Drain-Current Variability of MOSFETs
  Abstract

We have investigated the static variability of p-MOSFETs by evaluating the drain current under various conditions of gate and drain voltages. The value of drain current variability (σId/Id) is proportional to (LW)-1/2 before the short channel effect appears, being similar to that of Vt variability. The magnitude of σId/Id decreases as the gate overdrive (Vg-Vt) decreases, and it is classified into two regimes that correspond to the carrier conduction mechanisms, namely diffusion and drift transports. This result strongly suggests that the dominant factors for determining σId/Id values are related to the carrier conduction mechanisms.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
184-187
DOI
10.4028/www.scientific.net/KEM.470.184
Citation
K. Ohmori, K. Shiraishi, K. Yamada, "Influences of Carrier Transport on Drain-Current Variability of MOSFETs", Key Engineering Materials, Vol. 470, pp. 184-187, 2011
Online since
February 2011
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