Paper Title:
Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
  Abstract

The singular nature of the Boltzmann transport equation leads to the boundary layer structure around the virtual source in nano-scale device structures. We show that the boundary layer is a key concept to understand the physical mechanism behind quasi-ballistic transport in nano-scale devices. The self-consistent 3D Monte Carlo device simulator is constructed by accurately including the full Coulomb interaction. It is explicitly shown that the Coulomb interaction is indeed a key ingredient for any reliable predictions of device characteristics.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
207-213
DOI
10.4028/www.scientific.net/KEM.470.207
Citation
N. Sano, T. Karasawa, "Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction", Key Engineering Materials, Vol. 470, pp. 207-213, 2011
Online since
February 2011
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