Paper Title:
Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs
  Abstract

The threshold voltage (Vth) variability in fully depleted SOI MOSFETs with intrinsic channel and ultrathin buried oxide under back bias voltage (Vbs) is extensively investigated by three dimensional device simulation. It is found that the Vth variability increases only slightly by applying negative Vbs by the effect of random dopant fluctuation (RDF) in the substrate, while the Vth variability is severely degraded by applying positive Vbs by the effect of the back interface inversion. As a result, there is a certain value of Vbs around 0 V where the Vth variability is minimized.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
214-217
DOI
10.4028/www.scientific.net/KEM.470.214
Citation
T. Hiramoto, T. Saraya, C. H. Lee, "Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs", Key Engineering Materials, Vol. 470, pp. 214-217, 2011
Online since
February 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:From a viewpoint of device application using p-channel SiC MOSFETs, control of their channel properties is of great importance. We aimed to...
711
Authors: Yue Hu, Hao Wang, De Wen Wang, Cai Xia Du, Miao Miao Ma, Jin Yang, Jin He
Chapter 7: Nanomaterials, Microelectronic Materials and New Functional Materials
Abstract:A 600V-class lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with step-doped drift region (SDD) in partial...
514
Authors: Tamara Rudenko, Sylvain Barraud, Yordan M. Georgiev, Vladimir Lysenko, Alexey Nazarov
Chapter 1: Low-Power Electronics and Spintronics
Abstract:This article presents a review of various methods for extracting the key parameters of junctionless (JL) MOSFETs, namely, the threshold...
17
Authors: Narin Tammarugwattana, Kitipong Mano, Kraisak Watthanarungsarit, Adirek Rangkasikorn, Navaphun Kayunkid, Jiti Nukeaw
Chapter 1: Sustainable Engineering and Innovative Technologies
Abstract:The objective of this work is to investigate the optical and electrical properties of bismuth-doped nickel-phthalocyanine thin films...
95