Paper Title:
Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors
  Abstract

Quantum-transport simulations of current-voltage characteristics are performed in ultra-small double-gate and gate-all-around metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a single attractive ion in the channel region. The ion induces a threshold voltage shift, whose origin is attributed to an ion-induced barrier lowering (IIBL). An analytical expression for the IIBL in ultra-small MOSFETs is derived. The analytical expression for the IIBL consists of two terms: a term related to the potential curvature at the potential top and a correction term due to the screening effects. The analytical model reproduces reasonably well the stimulated IIBL in the subthreshold region.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
218-223
DOI
10.4028/www.scientific.net/KEM.470.218
Citation
N. Mori, Y. Kamakura, G. Mil'nikov, H. Minari, "Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors", Key Engineering Materials, Vol. 470, pp. 218-223, 2011
Online since
February 2011
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