Paper Title:
Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs
  Abstract

An individual dopant atom may become the active unit of future electronic devices by mediating single-electron transport in nanoscale field-effect transistors. Single dopants can be accessed electrically even in a dopant-rich environment, offering the opportunity to develop applications based on arrays of dopants. Here, we focus on single-electron turnstile operation in arrays of dopant-induced quantum dots realized in highly-doped nanoscale transistors. We show that dopant-based single-electron turnstile can be achieved and tuned with a combination of two gates and we indicate guidelines for further optimization.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
27-32
DOI
10.4028/www.scientific.net/KEM.470.27
Citation
D. Moraru, K. Yokoi, R. Nakamura, S. Miki, T. Mizuno, M. Tabe, "Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs", Key Engineering Materials, Vol. 470, pp. 27-32, 2011
Online since
February 2011
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