Paper Title:
KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel
  Abstract

Low temperature Kelvin Probe Force Microscopy (LT-KFM) can be used to monitor the electronic potential of individual dopants under an electric field. This capability is demonstrated for silicon-on-insulator field-effect-transistors (SOI-FETs) with a phosphorus-doped channel. We show results of the detection of individual dopants in Si by LT-KFM. Furthermore, we also observe single-electron charging in individual dopants located in the Si channel region.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
33-38
DOI
10.4028/www.scientific.net/KEM.470.33
Citation
M. Anwar, D. Moraru, Y. Kawai, M. Ligowski, T. Mizuno, R. Jabłoński, M. Tabe, "KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel", Key Engineering Materials, Vol. 470, pp. 33-38, 2011
Online since
February 2011
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