Paper Title:
Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures
  Abstract

We have investigated C-V and photoluminescence (PL) characteristics of ultra-thin silicon-on-insulator (SOI) samples. Thickness dependence of a free exciton (FE) PL and an electron-hole droplet (EHD) PL has been investigated. We have found a remarkable enhancement of an EHD PL with decrease in the thickness of SOI samples.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
39-42
DOI
10.4028/www.scientific.net/KEM.470.39
Citation
Y. Sakurai, S. Nomura, K. Shiraishi, K. Ohmori, K. Yamada, "Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures", Key Engineering Materials, Vol. 470, pp. 39-42, 2011
Online since
February 2011
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