Paper Title:
Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact
  Abstract

Ohmic contacts are crucial for both device applications and the study of fundamental physics. From the perspective of device scaling trends, nano-scale Ohmic contacts are indispensable for future LSI technologies such as metallic source and drain contacts. In this study, we investigate the I-V characteristics using a varying discrete level distribution based on our previously-proposed model. Our calculated results show that linear I-V properties can be obtained from uniform discrete level distributions.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
43-47
DOI
10.4028/www.scientific.net/KEM.470.43
Citation
Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi, "Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact", Key Engineering Materials, Vol. 470, pp. 43-47, 2011
Online since
February 2011
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