Paper Title:
Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure
  Abstract

We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the sweep speed dependence of electron injection energy with a numerical calculation based on our collective tunneling model, that we developed to emulate the experiment in this system, and obtained a new insight into the origin of sweep speed dependence. We revealed that our model can reproduce the sweep speed dependence of electron tunneling. This insight is useful for designing future nano-electronic devices.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
48-53
DOI
10.4028/www.scientific.net/KEM.470.48
Citation
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh, "Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure", Key Engineering Materials, Vol. 470, pp. 48-53, 2011
Online since
February 2011
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$32.00
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