Paper Title:
Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator
  Abstract

Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
79-84
DOI
10.4028/www.scientific.net/KEM.470.79
Citation
H. G. Yang, M. Iyota, S. Ikeura, D. Wang, H. Nakashima, "Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator", Key Engineering Materials, Vol. 470, pp. 79-84, 2011
Online since
February 2011
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