Paper Title:
SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator
  Abstract

We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO2 films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm2/Vs owing to the high crystallinity.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
8-13
DOI
10.4028/www.scientific.net/KEM.470.8
Citation
T. Sadoh, K. Toko, M. Kurosawa, T. Tanaka, T. Sakane, Y. Ohta, N. Kawabata, H. Yokoyama, M. Miyao, "SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator", Key Engineering Materials, Vol. 470, pp. 8-13, 2011
Online since
February 2011
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