Paper Title:
Resistive Memory Utilizing Ferritin Protein with Nano Particle
  Abstract

This study reports on the controlled single conductive path in ReRAM formed by embedding Pt nanoparticles (Pt NPs) in NiO film. Homogenous Pt NPs produced and placed by ferritin protein produce electric field convergence which leads to the controlled conductive path formation. The ReRAM with Pt NPs shows stable switching behavior. A Pt NP density decrease results in an increase of OFF state resistance and decrease of forming voltage, whereas ON resistance was independent from the Pt NP density, which indicates that a single metal NP in a memory cell will achieve extremely high-on/off resistance ratio, low power operation and stable operation.

  Info
Periodical
Edited by
Seiichi Miyazaki and Hitoshi Tabata
Pages
92-97
DOI
10.4028/www.scientific.net/KEM.470.92
Citation
M. Uenuma, K. Kawano, B. Zheng, M. Horita, S. Yoshii, I. Yamashita, Y. Uraoka, "Resistive Memory Utilizing Ferritin Protein with Nano Particle", Key Engineering Materials, Vol. 470, pp. 92-97, 2011
Online since
February 2011
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