Paper Title:
ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes
  Abstract

The fabrication of zinc oxide (ZnO)based thin-film field-effect transistors (TFTs) on p-Si substrates by rf magnetron sputtering, photolithography and wet etching processes was presented. Bottom-gate-type thin film transistors using ZnO as an active channel layer were constructed, and their properties were characterized by atomic force microscope, X-ray diffraction and I-V measurements. The fabricated ZnO transistors exhibited enhancement mode characteristics with the on-to-off current ratio of ∼105 and the threshold voltage of 10V. It is believed that the ZnO TFTs fabricatd by the simple and low-cost technique could be applicable to electronic devices.

  Info
Periodical
Key Engineering Materials (Volumes 480-481)
Edited by
Yanwen Wu
Pages
605-608
DOI
10.4028/www.scientific.net/KEM.480-481.605
Citation
H. Y. Ma, E. J. Ding, Z. L. Shi, "ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes", Key Engineering Materials, Vols. 480-481, pp. 605-608, 2011
Online since
June 2011
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Price
$32.00
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