Paper Title:
Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells
  Abstract

Five-period hydrogenated silicon carbide (SiC) multiple quantum wells with silicon dioxide (SiO2) or silicon nitride (SiN) dielectric that were synthesized by high density plasma chemical vapor deposition were studied using photoluminescence (PL) spectroscopy to understand its blue shift. Rapid thermal annealing induced significant blue shifting in the PL spectra after fluorine ion implantation due to crystallization. The thinning of the SiC causes blue shift due to the quantum confinement effect. The higher PL intensity of the amorphous SiC:H in SiO2 than in SiC/SiN may be attributed to the high number of non-radiative sites on its surface. Annealing with nitrogen may cause impurities in SiC/SiO2, thereby broadening the PL peak.

  Info
Periodical
Key Engineering Materials (Volumes 480-481)
Edited by
Yanwen Wu
Pages
629-633
DOI
10.4028/www.scientific.net/KEM.480-481.629
Citation
W. T. Chang, Y. T. Chen, C. C. Kuo, "Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells", Key Engineering Materials, Vols. 480-481, pp. 629-633, 2011
Online since
June 2011
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Price
$32.00
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