The Bi2Mn0.1V0.9O5.35-δ (BIMNVOX.10) thin films have been successfully deposited on the LaNiO3(LNO)/Si (100) substrates by chemical solution deposition process. The phases, morphology and electrical properties of samples have been studied. The BIMNVOX.10 films show a (00l)-preferred orientation and have a homogeneous distribution of grains. A low frequency dielectric dispersion observed in the films may be originated from the short distant diffusion of oxygen vacancies. The Cole-Cole plots of dielectric constant for the BIMNVOX.10 films appear semicircular arc with the center off the x-axis and deviate from the ideal mono-dispersive Debye model. The frequency dependent of ac conductivity for BIMNVOX.10 films follows the Joscher’s power law, mainly contributed to the grain resistivity and predicts the nature of an oxygen vacancies conduction process. The complex impedance spectra reveal that electrical process arises due to contribution from the grain interior and grain boundary effects.