Paper Title:
Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques
  Abstract

In this article, integrated AlGaN/GaN cantilevers on (111) silicon substrate are fabricated and characterized. The process started with AlGaN/GaN HEMTs fabrication followed by a series of dry-etch-only MEMS process. To characterize the residual stress distribution, Micro-Raman spectroscopy is used and the residual stress in suspended GaN cantilever is found ~ 90% lower after releasing. A type of micro-bending test is used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. An output current modulation greater than 20% can be observed when the cantilever is vertically downward deflected ~ 30 µm.

  Info
Periodical
Edited by
Xiaohao Wang
Pages
14-17
DOI
10.4028/www.scientific.net/KEM.483.14
Citation
J. A. Lv, Z. C. Yang, G. Z. Yan, Y. Cai, B. S. Zhang, K. J. Chen, "Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques", Key Engineering Materials, Vol. 483, pp. 14-17, 2011
Online since
June 2011
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$32.00
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