Paper Title:
The Design of AlGaN/GaN HEFT-Micro-Accelerometer and Temperature- Dependence Electrical Performance
  Abstract

In this paper, We use a novel principle to detect acceleration and report how I-V characteristics and piezoresistance coefficient of AlGaN/GaN HEFT-micro-accelerometer are affected by setting different temperatures. It is shown that saturation current of device would go down if the temperature goes up, which is about 0.028mA/°C, based on the research. However, the device can work well at the temperature range of -50°C to 50°C, which indicates that it can work safely in the larger temperature range.

  Info
Periodical
Edited by
Xiaohao Wang
Pages
174-179
DOI
10.4028/www.scientific.net/KEM.483.174
Citation
T. Liang, J. J. Tang, Q. Q. Zhang, Y. Wang, J. Li, J. Liu, J. J. Xiong, "The Design of AlGaN/GaN HEFT-Micro-Accelerometer and Temperature- Dependence Electrical Performance", Key Engineering Materials, Vol. 483, pp. 174-179, 2011
Online since
June 2011
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