Paper Title:
Structure Design, Fabrication and Characteristics of Polysilicon Nano-Thin Films Resistances Pressure Sensor Based on MEMS Technology
  Abstract

A polysilicon nano-thin films pressure sensor was designed and fabricated on single crystal silicon substrate by MEMS technology in this paper, and the sensor is composed by Wheatstone bridge structure with four polysilicon nano-thin films resistances fabricated on squared silicon membrane. The experiment result shows that, under constant current power supply of 0.875mA , full scale output is 24.05 mV at room temperature, sensitivity is 0.15 mV/kPa, when the temperatures are from -20 to 80°C, the coefficient of zero temperature and sensitivity temperature is –960 ppm/°C and –820 ppm /°C respectively.

  Info
Periodical
Edited by
Xiaohao Wang
Pages
200-205
DOI
10.4028/www.scientific.net/KEM.483.200
Citation
X. F. Zhao, D. Z. Wen, Y. Li, Y. X. Hou, C. P. Ai, Z. Q. Wang, D. J. Xiu, "Structure Design, Fabrication and Characteristics of Polysilicon Nano-Thin Films Resistances Pressure Sensor Based on MEMS Technology", Key Engineering Materials, Vol. 483, pp. 200-205, 2011
Online since
June 2011
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$32.00
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