Paper Title:
Technique for Compensation of Temperature Drift in Thermal Excited Si-Based Resonant Pressure Sensor
  Abstract

A Si-based resonant pressure sensor structure with dual-beam was proposed to solve the problem of serious temperature drift in thermal excited Si-based resonant pressure sensor. In this structure, temperature variation sensed by non-pressure-sensing resonant beam was subtracted from that sensed by pressure-sensing beam, to cancel variations of the pressure-sensing beam with temperature and compensate for temperature drift of thermal-excited Si-based resonant pressure sensor. A prototype of Si-based resonant pressure sensor with dual-beam was developed. Preliminary test results showed that the effect of temperature drift was reduced to 1/30 of the uncompensated device, greatly improving sensing accuracy of thermal excited Si-based resonant pressure sensor.

  Info
Periodical
Edited by
Xiaohao Wang
Pages
224-227
DOI
10.4028/www.scientific.net/KEM.483.224
Citation
Z. Y. Zhang, Y. Mei, J. G. Li, X. G. Li, Z. C. Feng, "Technique for Compensation of Temperature Drift in Thermal Excited Si-Based Resonant Pressure Sensor", Key Engineering Materials, Vol. 483, pp. 224-227, 2011
Online since
June 2011
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