Paper Title:
Lateral RF MEMS Switch Based on Surface Micromachining Process
  Abstract

In this paper, a novel RF MEMS switch driven by combs with low insertion loss is presented. The developed SPST RF MEMS switch with a lateral resistive contact and gold structure layer on a silicon substrate has been fabricated by surface micromachining process. The RF performance of the switch indicates an insertion loss below 0.30 dB at 20 GHz, a return loss better than 20 dB and isolation greater than 30 dB. Good RF characteristics have been achieved by the large contact area and a lateral Au-to-Au resistive contact.

  Info
Periodical
Edited by
Xiaohao Wang
Pages
457-460
DOI
10.4028/www.scientific.net/KEM.483.457
Citation
G. P. Du, J. Zhu, Y. W. Yu, S. X. Jia, L. L. Jiang, "Lateral RF MEMS Switch Based on Surface Micromachining Process", Key Engineering Materials, Vol. 483, pp. 457-460, 2011
Online since
June 2011
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