Paper Title:
Effect of Wet Etching Parameter on the Diameter and Length of Silicon Nanowires
  Abstract

A wet etching method for preparing silicon nanowires on silicon substrates at near room temperature is presented. The effect of experiment parameter on the silver nanoparticle forming including concentration of AgNO3, immersing time and solution temperature, and the effect of etching time on the length of silicon nanowires are investigated. It is concluded that solution temperature has more impact to diameter of silicon nanowires than concentration of AgNO3 and immersing time and longer etching time may result in longer silicon nanowires.

  Info
Periodical
Edited by
Xiaohao Wang
Pages
584-588
DOI
10.4028/www.scientific.net/KEM.483.584
Citation
Y. He, C. Y. Jiang, H. X. Yin, C. Jun, W. Z. Yuan, "Effect of Wet Etching Parameter on the Diameter and Length of Silicon Nanowires", Key Engineering Materials, Vol. 483, pp. 584-588, 2011
Online since
June 2011
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