Paper Title:
Effects of Phosphorus-Doping on the Microstructures, Optical and Electric Properties in N-Type Si:H Thin Films
  Abstract

In this paper we present a system study of phosphorus-doped hydrogenated silicon (Si:H) films prepared on glass by plasma enhanced chemical vapor deposition (PECVD) technique with radio frequency (RF) (13.56 MHz) and DC bias stimulation. The films were characterized using Raman spectroscopy, X-ray diffraction (XRD), optical transmittance and square resistance measurement.

  Info
Periodical
Edited by
Xiaohao Wang
Pages
711-715
DOI
10.4028/www.scientific.net/KEM.483.711
Citation
J. N. Ding, F. Ye, S. B. Wang, N. Y. Yuan, "Effects of Phosphorus-Doping on the Microstructures, Optical and Electric Properties in N-Type Si:H Thin Films", Key Engineering Materials, Vol. 483, pp. 711-715, 2011
Online since
June 2011
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