This paper reports the influence of sintering additives (RE2O3, Al2O3RE2O3, RE = Yb, Y and Gd, 13 vol%) and mixing effect of 30 nm SiC powder with 800 nm SiC powder on phases of grain boundaries, grain size of SiC, fracture toughness and strength of SiC hot-pressed at 1950°C under 39 MPa of applied pressure. Rare earth ions were uniformly adsorbed on negatively charged SiC particles with 150 nm Al2O3 particles in aqueous suspensions at pH 5. A rapid densification of SiC with one component RE2O3 occurred above 1700°C when a liquid of SiO2 (formed on SiC particles)RE2O3 system was formed. The Al2O3RE2O3 additives lowered a liquid formation temperature to 14001500°C and enhanced the densification rate of SiC. An increased solubility of 30 nm SiC in a liquid during dissolution-precipitation process provided an amorphous phase of SiCSiO2Al2O3RE2O3 system at grain boundaries and suppressed the grain growth of SiC. The fracture toughness of dense SiC was dominated by the grain boundary thickness controlled by grain size of SiC and amount of oxide additives. Mixing of 30 nm SiC with 800 nm SiC improved greatly the strength of SiC with two component oxides and the mean flexural strengths reached 740810 MPa.